sot23 npn silicon planar high voltage transistors issue 4 - november 1996 j partmarking details - FMMT5550 ? 1fz fmmt5551 ? zg1 complementary types - FMMT5550 ? fmmt5400 fmmt5551 ? fmmt5401 absolute maximum ratings. parameter symbol fmmt 5550 fmmt5551 unit collector-base voltage v cbo 160 180 v collector-emitter voltage v ceo 140 160 v emitter-base voltage v ebo 66v continuous collector current i c 600 600 ma power dissipation at t amb =25c p tot 330 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). FMMT5550 fmmt5551 parameter symbol min. max. min. max. unit conditions. collector-base breakdown voltage v (br)cbo 160 180 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 140 160 v i c =1ma emitter-base breakdown voltage v (br)ebo 66v i e =10 m a* collector cut-off current i cbo 100 100 50 50 na m a na m a v cb =100v v cb =100v, t a =100c v cb =120v v cb =120v, t a =100c static forward current transfer ratio h fe 60 60 20 250 80 80 30 250 i c =1ma, v ce =5v i c =10ma, v ce =5v i c =50ma, v ce =5v collector-emitter saturation voltage v ce(sat) 0.15 0.25 0.15 0.20 v v i c =10ma, i b =1ma i c =50ma, i b =5ma base-emitter saturation voltage v be(sat) 1.0 1.2 1.0 1.2 v v i c =10ma, i b =1ma i c =50ma, i b =5ma transition frequency f t 100 300 100 300 mhz i c =10ma, v ce =10v f=100mhz output capacitance c obo 6.0 6.0 pf v cb =10v, f=1mhz small signal h fe 50 200 50 260 i c =1ma, v ce =10v f=1khz ? noise figure nf 10 8 db i c =250 m a, v ce =5v, r s =1k w f=10hz to 15.7khz ? periodic sample test only . FMMT5550 fmmt5551 c b e page number page number
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